Title :
Gamma-radiation-induced inversion-layer hole mobility degradation in p-channel power MOSFETs at 300 K and 77 K
Author :
Zupac, D. ; Galloway, K.F. ; Schrimpf, R.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
The effects of radiation-induced interfacial charges on the inversion-layer hole mobility in p-channel power MOSFETs at room temperature and 77 K are investigated. The mobility degradation is more pronounced at 77 K than at room temperature due to an increased importance of Coulomb scattering from interfacial charges when the phonon scattering is reduced. The radiation-induced mobility degradation is primarily due to interface traps
Keywords :
carrier mobility; gamma-ray effects; hole traps; insulated gate field effect transistors; inversion layers; power transistors; 300 K; 77 K; Coulomb scattering; gamma radiation effects; interface traps; inversion-layer hole mobility degradation; p-channel power MOSFETs; phonon scattering; radiation-induced interfacial charges; Cryogenics; Degradation; Electric variables measurement; Ionizing radiation; MOSFETs; Phonons; Scattering; Telephony; Temperature; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213596
