Title :
Long term ionization response of several BiCMOS VLSIC technologies
Author :
Pease, Ronald L. ; Combs, William ; Clark, Steven
Author_Institution :
Mission Research Corp., Albuquerque, NM, USA
Abstract :
BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. This paper examines the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 krad(Si) for both failure modes in all five technologies
Keywords :
BiCMOS integrated circuits; VLSI; digital integrated circuits; failure analysis; integrated circuit technology; radiation effects; 5×103 to 2×104 rad; BiCMOS VLSIC technologies; buried layer; edge leakage; failure modes; feature size; gate arrays; ionization failure thresholds; long term ionization response; memories; recessed field oxide isolation; test structures; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Costs; Ionization; Isolation technology; MOSFETs; Space technology; Testing; Weapons;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213597
