Material characterization during the fabrication of silicon nuclear detectors

Author

Fontaine, J. Ch ; Barthe, S. ; Ponpon, J.P. ; Schunck, J.P. ; Siffert, P.

Author_Institution

Centre de Recherches Nucl., Strasbourg, France

fYear

1991

fDate

9-12 Sep 1991

Firstpage

84

Lastpage

88

Abstract

A method based on the photoconductive decay under pulsed infrared illumination has been developed to determine both the bulk minority carrier lifetime and the surface recombination velocity of thermally oxidized silicon samples. The usefulness of the method has been illustrated with two examples: control of the process during the various technological steps used to prepare nuclear radiation detectors and evaluation of bulk and surface degradation during neutron irradiation of silicon wafers used to make detectors

Keywords

carrier lifetime; electron-hole recombination; elemental semiconductors; minority carriers; neutron detection and measurement; neutron effects; semiconductor counters; silicon; Si; bulk minority carrier lifetime; neutron irradiation; nuclear detectors; photoconductive decay; pulsed infrared illumination; radiation detectors; surface degradation; surface recombination velocity; thermal oxidation; Charge carrier lifetime; Fabrication; Lighting; Neutrons; Photoconducting materials; Photoconductivity; Process control; Radiation detectors; Silicon; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213602

Filename

213602