Title :
Thermal neutron detection using Si detector and a boron implanted polyethylene converter
Author :
Barelaud, B. ; Makovicka, L. ; Dubarry, B. ; Paul, D. ; Decossas, J.L. ; Vareille, J.C.
Author_Institution :
Limoges Univ., France
Abstract :
The development of semiconductor detector technology has led the authors to consider real time dosimetry. The study concerns the thermal neutron detection through (n,α) reaction on boron 10, with recording of secondary particles (α, 7Li) by a PIPS detector (passivated implanted Si detector). The authors compared theoretical estimates with experimental results from irradiations in CEN Cadarache. This results are given as the number of registered pulses per milliSievert per square centimeter
Keywords :
dosimetry; elemental semiconductors; neutron detection and measurement; semiconductor counters; silicon; PIPS detector; Si detector; polyethylene converter; real time dosimetry; registered pulses; secondary particles; semiconductor detector technology; thermal neutron detection; Boring; Boron; Chromium; Detectors; Dosimetry; Estimation theory; Laboratories; Neutrons; Polyethylene; Polymers;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213604
