Development of the radiation sensitivity of PMOS dosimeters

PMOS dosimeters have applications in spacecraft, medicine and personnel dosimetry. Their suitability to a particular application depends on the sensitivity of the gate oxide to radiation. The aim of this paper is to examine the effect of gate oxide growth conditions on the sensitivity of the NMRC´s PMOS RADFET, which has a 400 nm dry/wet/dry gate oxide. The necessity for this evaluation arises because existing published results do not address the sensitivity of dry/wet/dry oxides in the range 100 nm-1000 nm. This paper clearly shows that for the NMRC´s RADFET gate oxide an optimum set of processing conditions exist. These will allow maximum radiation sensitivity to be obtained from the NMRC´s PMOS dosimeters.<>