Title :
MOS radiation dosimeter: sensitivity and stability
Author :
Sarrabayrouse, G.
Author_Institution :
LAAS-CNRS, Toulouse, France
Abstract :
The main properties of MOS radiation dosimeters are presented. The sensitivity at high field ranges between 2 mV/Rad and 20 mV/Rad. The post-irradiation recovery can be as low as 0,1% for 1000 h at ambient temperature
Keywords :
dosimeters; insulated gate field effect transistors; 1000 h; MOS radiation dosimeters; ambient temperature; post-irradiation recovery; sensitivity; stability; Annealing; Current measurement; Dosimetry; Insulation; Ionizing radiation; MOSFETs; Radiation detectors; Stability; Temperature sensors; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213609
