• DocumentCode
    3149509
  • Title

    MOS radiation dosimeter: sensitivity and stability

  • Author

    Sarrabayrouse, G.

  • Author_Institution
    LAAS-CNRS, Toulouse, France
  • fYear
    1991
  • fDate
    9-12 Sep 1991
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    The main properties of MOS radiation dosimeters are presented. The sensitivity at high field ranges between 2 mV/Rad and 20 mV/Rad. The post-irradiation recovery can be as low as 0,1% for 1000 h at ambient temperature
  • Keywords
    dosimeters; insulated gate field effect transistors; 1000 h; MOS radiation dosimeters; ambient temperature; post-irradiation recovery; sensitivity; stability; Annealing; Current measurement; Dosimetry; Insulation; Ionizing radiation; MOSFETs; Radiation detectors; Stability; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
  • Conference_Location
    La Grande-Motte
  • Print_ISBN
    0-7803-0208-7
  • Type

    conf

  • DOI
    10.1109/RADECS.1991.213609
  • Filename
    213609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3149509