Title :
RADECS 91: First European Conference on Radiation and its Effects on Devices and Systems (Cat. No.91TH0400-2)
Abstract :
The following topics are dealt with: dosimetry components and sensors; semi-permanent and long-term irradiation effects in electronic structures; radiation effects in power MOSFETs; radiation effects, modeling, and hardening of GaAs, SOS, and SOI technologies; radiation-tolerant technologies; radiation effects in passive and bipolar components; radiation effects in space systems; radiation effects in CCDs; radiation effects in optical fiber and optoelectronics; funnel-effect modeling; characterization of MOS devices; single event upsets (SEUs) in devices and ICs; modeling and characterization of basic radiation effects; and irradiation facilities
Keywords :
MOS integrated circuits; bipolar integrated circuits; charge-coupled device circuits; dosimetry; insulated gate field effect transistors; integrated circuit technology; optical fibres; optoelectronic devices; power transistors; radiation effects; radiation hardening (electronics); semiconductor device models; semiconductor process modelling; CCDs; MOS devices; SOI technologies; SOS; bipolar components; dosimetry components; electronic structures; funnel-effect modeling; hardening; irradiation facilities; long-term irradiation; modelling; optical fiber; optoelectronics; power MOSFETs; radiation-tolerant technologies; semi-permanent effects; single event upsets; space systems;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte, France
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213614
