DocumentCode
3149632
Title
Post irradiation effects (PIE) in integrated circuits [MOS]
Author
Barnes, C.E. ; Fleetwood, D.M. ; Shaw, D.C. ; Winokur, P.S.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1991
fDate
9-12 Sep 1991
Firstpage
41
Lastpage
54
Abstract
Post Irradiation Effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. These variations indicate that a rebound or PIE `recipe´ used for radiation hardness assurance must be chosen with care. This paper provides examples of PIE in a variety of integrated circuits of importance to spacecraft electronics
Keywords
MOS integrated circuits; failure analysis; integrated circuit testing; radiation hardening (electronics); PIE, post irradiation effects; catastrophic failure; integrated circuits; normal recovery; radiation hardness assurance; rebound; spacecraft electronics; Annealing; Circuit testing; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Propulsion; Radiation hardening; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213616
Filename
213616
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