Total dose radiation effects on the hardened CMOS/bulk and CMOS/SOS

Radiation-resistant performance of commercial and rad-hard CMOS/bulk and CMOS/SOS devices is presented in the total dose environment, when the static power currents of CMOS are increased by a hundred times over the limit value before irradiation, the I_DD is determined as the failure criteria of ionizing radiation damage. The γ total dose ionizing radiation failure threshold of commercial CMOS devices in China is in a range of 52-76 Gy (Si) (+10 V) whether Al gate process or Si gate. Rad-hard Al gate CMOS/bulk has achieved hardness of 6×10³ Gy (Si). Rad-hard Si gate CMOS/SOS have the level of about 2×10⁴ Gy (Si). These results were compared with radiation hardness of American RCA commercial high speed CMOS/bulk circuits from the same type at same irradiation condition