DocumentCode
3149871
Title
Electric properties and domain structures in Ba(Ti,Sn)O3 ceramics
Author
Oh, Ki-Young ; Uchino, Kenji ; Cross, L. Eric
Author_Institution
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
1991
fDate
33457
Firstpage
218
Lastpage
221
Abstract
The Ba(Ti,Sn)O3 ceramics are known as relaxor materials and they show very small hysteresis of field induced strains and field induced polarizations. An optical study was attempted to explain these dielectric properties. Domain structures and motions in Ba(Ti1-x Snx)O3 (x=0, 0.05, 0.1, 0.13) ceramics were observed under an electric field at various temperatures using a high resolution CCD microscope system. Electrical properties such as field induced strains, dielectric properties and field induced polarization characteristics were also measured. The Ba(Ti1-x Snx )O3 ceramics showed a significant difference in domain structures and motions with changing composition. The domain structure became tiny and complex with increasing x. Changes of domain structures due to the phase transitions were also observed with varying temperature. The domain reorientation was easily induced with rising and falling electric field. The results of domain observations can explain the electrical properties well
Keywords
barium compounds; ceramics; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric transitions; optical microscopy; stoichiometry; Ba(Ti,Sn)O3 ceramics; Ba(Ti1-xSnx)O3; BaSnTiO3; dielectric properties; domain reorientation; domain structures; electric properties; field induced polarization characteristics; field induced polarizations; field induced strains; high resolution CCD microscope system; hysteresis; optical study; phase transitions; relaxor materials; Capacitive sensors; Ceramics; Charge coupled devices; Dielectric materials; Hysteresis; Microscopy; Optical materials; Optical polarization; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location
University Park, PA
Print_ISBN
0-7803-1847-1
Type
conf
DOI
10.1109/ISAF.1994.522342
Filename
522342
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