• DocumentCode
    3149902
  • Title

    Neutron effects on HEMT devices

  • Author

    Dupont-Nivet, E. ; Pasquali, M.

  • Author_Institution
    CEA, Centre d´´Etudes des Bruyeres-Le-Chatel, France
  • fYear
    1991
  • fDate
    9-12 Sep 1991
  • Firstpage
    189
  • Lastpage
    193
  • Abstract
    Neutron irradiation of high electron mobility transistors (HEMT) up to fluences of 5 1014 neutrons.cm-2 has shown that their static, small-signal and noise parameters undergo rather small variations. A theoretical analysis of the HEMT electrical and noise models explains the origin of this tolerance to neutron irradiation
  • Keywords
    high electron mobility transistors; neutron effects; semiconductor device models; semiconductor device noise; HEMT devices; electrical models; fluences; neutron irradiation; noise models; noise parameters; small-signal parameters; static parameters; Degradation; Doping; Electrons; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Neutrons; Noise figure; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
  • Conference_Location
    La Grande-Motte
  • Print_ISBN
    0-7803-0208-7
  • Type

    conf

  • DOI
    10.1109/RADECS.1991.213633
  • Filename
    213633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3149902