DocumentCode :
3149902
Title :
Neutron effects on HEMT devices
Author :
Dupont-Nivet, E. ; Pasquali, M.
Author_Institution :
CEA, Centre d´´Etudes des Bruyeres-Le-Chatel, France
fYear :
1991
fDate :
9-12 Sep 1991
Firstpage :
189
Lastpage :
193
Abstract :
Neutron irradiation of high electron mobility transistors (HEMT) up to fluences of 5 1014 neutrons.cm-2 has shown that their static, small-signal and noise parameters undergo rather small variations. A theoretical analysis of the HEMT electrical and noise models explains the origin of this tolerance to neutron irradiation
Keywords :
high electron mobility transistors; neutron effects; semiconductor device models; semiconductor device noise; HEMT devices; electrical models; fluences; neutron irradiation; noise models; noise parameters; small-signal parameters; static parameters; Degradation; Doping; Electrons; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Neutrons; Noise figure; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
Type :
conf
DOI :
10.1109/RADECS.1991.213633
Filename :
213633
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3149902
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