DocumentCode
3149906
Title
Tm-doped GdVO4 laser longitudinally pumped by 808 nm laser diode
Author
Urata, Yoshihanr ; Wada, Satushi
Author_Institution
Megaopto Corp., Saitama, Japan
fYear
2003
fDate
22-27 June 2003
Firstpage
26
Abstract
In this study, a Tm:GdVO4 crystal grown by the Czochralski (CZ) technique was investigated. We pumped the crystal with an 808 nm LD and obtained a slope efficiency of 12.2 %, the maximum value reported for LD-pumped Tm:GdVO4.
Keywords
crystal growth from melt; gadolinium; optical materials; optical pumping; solid lasers; thulium; 12.2 percent; 808 nm; Czochralski technique; GdVO4:Tm; LD-pumped Tm:GdVO4; crystal growth; laser diode; slope efficiency; Coatings; Cooling; Couplers; Diode lasers; Electrons; Energy measurement; Laser beams; Laser excitation; Optimized production technology; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312088
Filename
1312088
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