Title :
High total dose effects on CMOS/SOI technology
Author :
Flament, O. ; Dupont-Nivet, E. ; Leray, J.L. ; Pere, J.F. ; Delagnes, E. ; Auberton-Herve, A.J. ; Giffard, B. ; Borel, G. ; Ouisse, T.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-Le-Chatel, France
Abstract :
CMOS silicon on insulator technology has shown its ability to process hardened components which remain functional after irradiation with a total dose of several tens of Megarads. New tests on elementary transistors and 29101 microprocessor have been made at doses up to 100 Mrad(SiO2) and above. Results of irradiation at these total doses are presented for different biases, together with the post-irradiation behaviour of the components. All the observations show that new parameters must be taken into account for hardness insurance at a high level of total dose
Keywords :
CMOS integrated circuits; microprocessor chips; radiation effects; semiconductor-insulator boundaries; 100E6 rad; 29101 microprocessor; CMOS/SOI technology; elementary transistors; hardness insurance; post-irradiation behaviour; silicon on insulator technology; total dose effects; CMOS process; CMOS technology; Electrodes; Insurance; Isolation technology; Microprocessors; Silicon on insulator technology; Testing; Voltage; X-rays;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213635
