DocumentCode
3149963
Title
Influence of parasitic transistors on the total dose hardness of MOS and MOS/SOI structures
Author
Augier, P. ; Boudenot, J.C. ; Roy, F. ; Bruguier, G.
Author_Institution
Thomson-CSF DSE, Bagneux, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
173
Lastpage
177
Abstract
In all CMOS technologies, the total dose sensitivity is determined by the properties of the gate oxide and the device isolation oxide. The hardness of CMOS circuits is limited by the presence of parasitic elements in parallel with the active structures. Improvements in gate-oxide behavior increase the importance of parasitic MOS structures in determining the total dose hardness of CMOS circuits
Keywords
CMOS integrated circuits; radiation effects; semiconductor-insulator boundaries; CMOS technologies; MOS/SOI structures; active structures; device isolation oxide; gate oxide; gate-oxide behavior; parasitic MOS structures; parasitic elements; parasitic transistors; total dose hardness; total dose sensitivity; CMOS technology; Circuits; Failure analysis; Isolation technology; MOS devices; MOSFETs; Manufacturing; Silicon on insulator technology; Space technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213636
Filename
213636
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