An evaluation of lead-zirconate based ceramics for use in nonvolatile ferroelectric memory devices

Author

Alberta, E.F. ; Bhalla, A.S.

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

1991

fDate

33457

Firstpage

249

Lastpage

252

Abstract

This paper will present an initial evaluation of the lead zirconate-lead zinc niobate solid solution for use in nonvolatile ferroelectric memory devices. Previous work has shown that the (x)·PbZrO₃-(1-x)·Pb(Zn_1/3Nb_2/3)O₃ [PZZN] system has “square” hysteresis loops accompanied by large remnant polarizations. In particular, compositions near the room temperature antiferroelectric to ferroelectric phase boundary will be investigated

Keywords

antiferroelectric materials; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric materials; ferroelectric transitions; lead compounds; permittivity; piezoceramics; piezoelectric materials; PbZrO₃-Pb(Zn₁3/Nb₂3/)O₃; PbZrO₃-Pb(ZnNb)O₃; ceramics; hysteresis loops; large remnant polarizations; nonvolatile ferroelectric memory devices; room temperature antiferroelectric to ferroelectric phase boundary; solid solution; Ceramics; Cooling; Dielectric constant; Dielectric losses; Ferroelectric materials; Hysteresis; Nonvolatile memory; Piezoelectric films; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Conference_Location

University Park, PA

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522350

Filename

522350