DocumentCode :
3150338
Title :
Low-power low-noise 0.13 µm CMOS X-band phased array receivers
Author :
Shin, Donghyup ; Rebeiz, Gabriel M.
Author_Institution :
University of California San Diego, USA
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
Single and 4-element phased array receivers have been developed in 0.13 µm CMOS for 9–10 GHz applications. The design is based on alternating amplifiers and phase shifter blocks to result in the lowest power consumption by limiting the output P1dB of active blocks. The 9–10 GHz phased array results in a measured average gain of 11–12 dB per channel, a NF of 3.0–3.3 dB, a P1dB of −15 to −16 dBm over a bandwidth of 1 GHz. The phased array consumes 19 mW per channel (76 mW − 4 channels) from a 1.2 V supply and occupies an area of 2.7×0.7 mm2 (3.0×2.4 mm2 − 4 channels). To our knowledge, this is the lowest power consumption silicon phased array to-date with this combination of gain, NF and linearity.
Keywords :
Bandwidth; Circuits; Energy consumption; Gain measurement; Linearity; Noise measurement; Phase measurement; Phase shifters; Phased arrays; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517953
Filename :
5517953
Link To Document :
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