The effects of irradiation on heteroepitaxial InP/InGaAs solar cells

Author

Karlina, L.B. ; Vozlovskii, V.V. ; Solov´ev, V.A. ; Shvarts, M.Z.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

13-17 May 1996

Firstpage

239

Lastpage

242

Abstract

Great interest in InGaAs solar cells is due to the possibility of their use as the bottom cells in high-efficiency mechanically stacked concentrator tandem solar cells and as the bottom cell for monolithic tandem solar cells. Using lightly doped material of n photoactive layers (n-p polarity) and a moderately doped p-layer allows an increase in the radiation resistance of these solar cells. The optimum design for a radiation resistant InGaAs solar cell seems to be a 0.8-1.2 μm thick emitter with a dopant concentration of (0.8-1)·10¹⁷ cm ^-3. The subject of this paper is experimental results obtained from studying the effect of 1 MeV electron, 3 and 10 MeV proton irradiation in InP/InGaAs solar cells

Keywords

III-V semiconductors; electron beam effects; epitaxial growth; gallium arsenide; indium compounds; p-n heterojunctions; proton effects; semiconductor device testing; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solar cells; 0.8 to 1.2 mum; 1 MeV; 3 to 10 MeV; InP-InGaAs; dopant concentration; heteroepitaxial InP/InGaAs solar cells; irradiation effects tests; lightly doped material; mechanically stacked concentrator tandem solar cells; monolithic tandem solar cells; optimum design; photoactive layers; radiation resistance; Circuits; Degradation; Electrical resistance measurement; Electrons; Indium gallium arsenide; Indium phosphide; Photovoltaic cells; Substrates; Sun; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563991

Filename

563991