Title :
The effects of irradiation on heteroepitaxial InP/InGaAs solar cells
Author :
Karlina, L.B. ; Vozlovskii, V.V. ; Solov´ev, V.A. ; Shvarts, M.Z.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Great interest in InGaAs solar cells is due to the possibility of their use as the bottom cells in high-efficiency mechanically stacked concentrator tandem solar cells and as the bottom cell for monolithic tandem solar cells. Using lightly doped material of n photoactive layers (n-p polarity) and a moderately doped p-layer allows an increase in the radiation resistance of these solar cells. The optimum design for a radiation resistant InGaAs solar cell seems to be a 0.8-1.2 μm thick emitter with a dopant concentration of (0.8-1)·1017 cm -3. The subject of this paper is experimental results obtained from studying the effect of 1 MeV electron, 3 and 10 MeV proton irradiation in InP/InGaAs solar cells
Keywords :
III-V semiconductors; electron beam effects; epitaxial growth; gallium arsenide; indium compounds; p-n heterojunctions; proton effects; semiconductor device testing; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solar cells; 0.8 to 1.2 mum; 1 MeV; 3 to 10 MeV; InP-InGaAs; dopant concentration; heteroepitaxial InP/InGaAs solar cells; irradiation effects tests; lightly doped material; mechanically stacked concentrator tandem solar cells; monolithic tandem solar cells; optimum design; photoactive layers; radiation resistance; Circuits; Degradation; Electrical resistance measurement; Electrons; Indium gallium arsenide; Indium phosphide; Photovoltaic cells; Substrates; Sun; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563991
