DocumentCode :
3150410
Title :
A 15-50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology
Author :
Chen, Jung-Hau ; Kuo, Che-Chung ; Hsin, Yue-Ming ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
784
Lastpage :
787
Abstract :
A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 30 dB from 15-50 GHz for both down and up-conversion with a chip size of 0.2 mm2. Besides, this mixer has an input P1dB of 4-10 dB and an IF bandwidth of 5 GHz. To the author´s knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technologies to date.
Keywords :
CMOS integrated circuits; MMIC mixers; field effect MMIC; CMOS technology; MMIC resistive FET ring mixer; bandwidth 5 GHz; broadband resistive FET ring mixer; field effect MMIC; frequency 15 GHz to 50 GHz; loss 13 dB to 17 dB; port to port isolations; size 0.18 mum; Bandwidth; CMOS technology; Circuit simulation; Coils; FETs; Impedance matching; Insertion loss; Isolation technology; Mixers; Radio frequency; CMOS mixers; down-conversion; resistive FET ring mixers; up-conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517957
Filename :
5517957
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3150410
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