A 15-50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology

Author

Chen, Jung-Hau ; Kuo, Che-Chung ; Hsin, Yue-Ming ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

23-28 May 2010

Firstpage

784

Lastpage

787

Abstract

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 30 dB from 15-50 GHz for both down and up-conversion with a chip size of 0.2 mm². Besides, this mixer has an input P_1dB of 4-10 dB and an IF bandwidth of 5 GHz. To the author´s knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technologies to date.

Keywords

CMOS integrated circuits; MMIC mixers; field effect MMIC; CMOS technology; MMIC resistive FET ring mixer; bandwidth 5 GHz; broadband resistive FET ring mixer; field effect MMIC; frequency 15 GHz to 50 GHz; loss 13 dB to 17 dB; port to port isolations; size 0.18 mum; Bandwidth; CMOS technology; Circuit simulation; Coils; FETs; Impedance matching; Insertion loss; Isolation technology; Mixers; Radio frequency; CMOS mixers; down-conversion; resistive FET ring mixers; up-conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5517957

Filename

5517957