DocumentCode
3150577
Title
Diode-pumped lasing of stoichiometric crystal KYb(WO4)2
Author
Lagatsky, A.A. ; Leburn, C.G. ; Brown, C.T.A. ; Sibbett, W.
Author_Institution
J.F. Allen Phys. Res. Labs., Univ. of St. Andrews, UK
fYear
2003
fDate
22-27 June 2003
Firstpage
58
Abstract
In this presentation we report results on an investigation of laser performance of a stoichiometric laser crystal KYbW for pumping with an InGaAs diode laser around the zero-phonon line at 981 nm. The slope efficiency of 32% was realized in a quasi-cw regime. We believe that continuous-wave laser operation in KYbW with laser diode pumping could be achieved using options for a suitable cooling technique for the crystal or employing thin-disk laser designs.
Keywords
indium compounds; laser beams; optical design techniques; optical materials; optical pumping; potassium compounds; solid lasers; stoichiometry; 32 percent; 981 nm; InGaAs; InGaAs diode laser; KYb(WO4)2; continuous-wave laser operation; cooling technique; laser diode pumping; quasi-cw regime; slope efficiency; stoichiometric crystal; thin-disk laser design; zero-phonon line; Diode lasers; Indium gallium arsenide; Laser beam cutting; Laser excitation; Laser mode locking; Laser modes; Power generation; Pump lasers; Solid lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312120
Filename
1312120
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