DocumentCode
3150606
Title
Diode pumped 2.79 μm Er3+:Cr3+:YSGG laser
Author
Marthaler, H. ; Sirotkin, A. ; Zagumennyi, A.I. ; Zavartsev, Yu.D. ; Luthy, W. ; Mikhailov, V. ; Weber, H.P.
Author_Institution
Inst. of Appl. Phys., Bern Univ., Switzerland
fYear
2003
fDate
22-27 June 2003
Firstpage
59
Abstract
In this paper, we report on lasing at 2.79 μm under 974 nm diode laser excitation in an Er:YSGG crystal codoped with chromium. The host is YSGG, an Y3Sc2Ga3O12 crystal. The present Cr3+:Er3+:YSGG crystal is grown by the Czochralski method at the Institute of General Physics in Moscow. The crystal has a thickness of 3 mm and its absorption coefficient at 974 nm is 2.6cm-1. Therefore, 54.2% of the incident pump power is absorbed in the crystal. The 2.79 μm radiation occurs from the transition of 4I112/ to 4I132/ in Er3+. The best absorption of the Er3+ ions is at 976 nm. The laser threshold is about 0.5 W and increases with a rising pump wavelength. The slope efficiency is 3.4 %. The resonator configuration is by no means optimized.
Keywords
absorption coefficients; chromium; crystal growth from melt; erbium; optical pumping; optical resonators; positive ions; semiconductor lasers; yttrium compounds; (YSc)3Ga5O12:Er3+, Cr3+; 0.5 W; 3 mm; 3.4 percent; 974 nm; Czochralski method; Er:YSGG crystal codoped with chromium; Er3+ ions; Institute of General Physics; Moscow; Y3Sc2Ga3O12; Y3Sc2Ga3O12 crystal; absorption coefficient; crystal growth; diode laser excitation; incident pump power; resonator configuration; slope efficiency; transition; Absorption; Chromium; Diode lasers; Energy states; Erbium; Laser excitation; Laser theory; Physics; Power lasers; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312121
Filename
1312121
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