DocumentCode :
3150759
Title :
THz Electronics projects at DARPA: Transistors, TMICs, and amplifiers
Author :
Albrecht, John D. ; Rosker, M.J. ; Wallace, H. Bruce ; Chang, Ting-Hao
Author_Institution :
Defense Advanced Research Projects Agency, Arlington, United States
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world´s fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.
Keywords :
Focusing; Frequency domain analysis; Optical imaging; Portfolios; Radar applications; Radar detection; Radar imaging; Submillimeter wave technology; Transistors; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517972
Filename :
5517972
Link To Document :
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