A Novel Exponential Structure for Silicon Waveguides for Increasing Net Optical Raman Gain

Author

Khorasaninejad, Mohammadreza ; Hashemi, Amir

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON

fYear

2008

fDate

26-28 Aug. 2008

Firstpage

25

Lastpage

28

Abstract

A novel exponential structure has been presented for increasing net gain of optical amplification inside silicon-on-insulator (SOI) waveguides. The stimulated Raman scattering (SRS) has been simulated using FDTD method. The simulation results for the proposed structure have been compared with both analytical and experimental results of the previous works.

Keywords

amplification; finite difference time-domain analysis; optical waveguides; silicon-on-insulator; stimulated Raman scattering; exponential structure; finite difference time domain method; net optical Raman gain; optical amplification; silicon waveguides; silicon-on-insulator waveguides; stimulated Raman scattering; Absorption; Fiber nonlinear optics; Finite difference methods; Nonlinear optics; Optical pumping; Optical scattering; Optical waveguides; Raman scattering; Silicon; Stimulated emission; Finite difference time domain; free carrier absorption; silicon-on-insulator; stimulated Raman scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunication Technologies 2008 and 2008 2nd Malaysia Conference on Photonics. NCTT-MCP 2008. 6th National Conference on

Conference_Location

Putrajaya

Print_ISBN

978-1-4244-2214-2

Electronic_ISBN

978-1-4244-2215-9

Type

conf

DOI

10.1109/NCTT.2008.4814229

Filename

4814229