Title :
Ionization growth in nitrogen gas in a coaxial geometry
Author :
Kashmiri, S. ; Lam, K. ; Mahajan, S.
Author_Institution :
Dept. of Electr. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
Abstract :
Electron avalanches are simulated in a coaxial geometry with nitrogen gas pressures up to 405.2 kPa. The purpose behind this simulation is to study the relative effect of nonuniformity and pressure on the growth of electron avalanches. Irrespective of the radius of the inner electrode, the multiplication of electrons is allowed over 1 cm only. The simulation is performed in various coaxial geometries. Comparisons of electron avalanches under different conditions of pressure and radius are made in the context of the time required for breakdown of the gas
Keywords :
electron avalanches; nitrogen; 101.3 kPa; 202.6 kPa; 303.9 kPa; 405.2 kPa; N2; coaxial geometry; electron avalanches; electron multiplication; gas breakdown; ionisation growth; Atmospheric modeling; Breakdown voltage; Coaxial components; Dielectrics; Electrons; Equations; Geometry; Ionization; Nitrogen; Solid modeling;
Conference_Titel :
Southeastcon '90. Proceedings., IEEE
Conference_Location :
New Orleans, LA
DOI :
10.1109/SECON.1990.117757