Title :
Design and Modeling of Dilute Nitride VCSEL By using DBR mirror
Author :
Hasnayeen, M.A. ; Othman, M. ; Faidz, A.R.
Author_Institution :
Fac. of Eng., Multimedia Univ., Cyberjaya
Abstract :
We have successfully designed a GaInNAs-based vertical cavity surface emitting laser structures with precisely adjusted resonant-cavity wavelengths. GaAs/Al(GaAs) based DBR modeling have been also implemented in this paper. The theory of optical multilayer is reviewed and the characteristics matrix method has been used to calculate the multilayer. A step by step procedure to design VCSEL has presented where ldquoDilute Nitriderdquo has used in cavity region. In this modeling the higher reflectivity has been achieved by adjusting higher refractive index in the first layer and lower refractive index for the second layer.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser theory; matrix algebra; optical design techniques; optical multilayers; reflectivity; refractive index; semiconductor device models; surface emitting lasers; wide band gap semiconductors; DBR mirror model; GaAs-AlGaAs; GaInNAs; characteristics matrix method; dilute nitride VCSEL; distributed Bragg reflector; optical multilayer; refractive index; resonant-cavity wavelength; vertical cavity surface emitting laser structure; Distributed Bragg reflectors; Laser modes; Laser theory; Mirrors; Optical design; Optical surface waves; Refractive index; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; Dilute Nitride (DN); Distributed Bragg Reflector (DBR); Vertical Cavity Surface Emitting Laser (VCSEL);
Conference_Titel :
Telecommunication Technologies 2008 and 2008 2nd Malaysia Conference on Photonics. NCTT-MCP 2008. 6th National Conference on
Conference_Location :
Putrajaya
Print_ISBN :
978-1-4244-2214-2
Electronic_ISBN :
978-1-4244-2215-9
DOI :
10.1109/NCTT.2008.4814236
