Title :
A high power circuit model for the gate turn off thyristor
Author :
Tsay, C.L. ; Fischl, R. ; Schwartzenberg, J. ; Kan, H. ; Barrow, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., PHiladelphia, PA, USA
Abstract :
The authors present GTO (gate turn off thyristor) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of parallel connection of two-transistor, three-resistor (2T-3R) circuits which make it compatible with the SPICE program. An experimental validation test shows that the accuracy of the model can be improved by increasing the number of 2T-3R cells.<>
Keywords :
switching; thyristor applications; GTO; dynamic switching characteristics; gate turn off thyristor; high power circuit model; static negative differential resistance; two-transistor three resistor circuits; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Electric resistance; P-n junctions; Power electronics; Resistors; SPICE; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131214
