DocumentCode :
3150972
Title :
Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics
Author :
Clarke, A.L. ; Akmal, M. ; Lees, J. ; Tasker, P.J. ; Benedikt, J.
Author_Institution :
Cardiff University, United Kingdom
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate bias as design tools on the performance of the design and proposes a strategy that utilizes their positive effect as well as considering the subsequent impact on device scaling. This was carried out on GaAs pHEMT devices from commercial processes that obtained measured peak efficiencies of 90.1% at P1dB in a class-B bias.
Keywords :
Degradation; Design optimization; Gallium arsenide; Harmonic analysis; High power amplifiers; PHEMTs; Power measurement; Power system harmonics; Process design; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517981
Filename :
5517981
Link To Document :
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