Title :
The epitaxial Co2+:YAG layers for passively Q-switched 1.3 μm-1.5 μm microlasers
Author :
Sarnecki, J. ; Kopczynski, K. ; Skwarcz, J. ; Mierczyk, Z. ; Mlynczak, J.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
This article deals with the investigation of a thin saturable absorber layer of Co2+:YAG deposited directly on the active Er,Yb:YAG substrate, by means of LPE technique. Such epitaxial structure is designed to fabricate Q-switched microchip laser operating at 1530 nm. The Co2+:YAG layers were grown from a supercooled molten garnet-flux (PbO-B2O3) high temperature solution using a standard isothermal LPE dipping technique.
Keywords :
Q-switching; cobalt; erbium; liquid phase epitaxial growth; metallic epitaxial layers; microchip lasers; optical fabrication; optical materials; ytterbium; 1.3 to 1.5 micron; 1530 nm; Er,Yb:YAG substrate; LPE; PbO-B2O3; YAG:Co2+; YAG:Er, Yb; YAl5O12:Co; YAl5O12:Er,Yb; epitaxial Co2+:YAG layers; fabrication; microchip laser; microlasers; passive Q-switching; supercooled molten garnet-flux; thin saturable absorber layer; Absorption; Cobalt; Solid lasers; Solid state circuits;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312151
