• DocumentCode
    3151412
  • Title

    Physically-aware analysis of systematic defects in integrated circuits

  • Author

    Wing Chiu Tam ; Blanton, R.D.

  • Author_Institution
    ECE Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2011
  • fDate
    20-22 Sept. 2011
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Systematic defects due to design-process interactions are a significant component of integrated circuit (IC) yield loss in nano-scale technologies. Test structures do not adequately represent the product in terms of feature diversity and feature volume, and therefore are unable to identify all the systematic defects that will affect a product over its manufacturing lifetime. This paper describes a comprehensive methodology that addresses the prevention and identification of systematic defects. For prevention, a method called RADAR (Rule Assessment of Defect-Affected Regions) has been developed for measuring the effectiveness of design-for-manufacturability (DFM) rules in preventing systematic defects that is based on volume diagnosis data. A second method called LASIC (Layout Analysis for Systematic Identification using Clustering), also based on volume diagnosis data, has been developed for identifying systematic defects that escape DFM. To validate RADAR and LASIC, a fast and accurate defect simulation framework called SLIDER (Simulation of Layout-Injected Defects for Electrical Responses) has been developed. SLIDER generates virtual failure data with known defect characteristics. Experiments involving two industrial chips and virtual failure data from SLIDER demonstrate the effectiveness of RADAR and LASIC.
  • Keywords
    design for manufacture; integrated circuit design; integrated circuit testing; integrated circuit yield; nanotechnology; DFM; LASIC; RADAR; SLIDER; design-for-manufacturability; integrated circuit yield loss; integrated circuits; layout analysis for systematic identification using clustering; nano-scale technologies; physically-aware analysis; rule assessment of defect-affected regions; simulation of layout-injected defects for electrical responses; systematic defects; volume diagnosis data; Databases; Feature extraction; Integrated circuits; Layout; Radar; Statistical analysis; Systematics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference (ITC), 2011 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1089-3539
  • Print_ISBN
    978-1-4577-0153-5
  • Type

    conf

  • DOI
    10.1109/TEST.2011.6139137
  • Filename
    6139137