Title :
Comparison of the properties of Pb(ZrTi)O3 thin films obtained by MOCVD using different source materials
Author :
Shiosaki, Tadashi ; Shimizu, Masaru
Author_Institution :
Dept. of Electron., Kyoto Univ., Japan
Abstract :
The properties of Pb(Zr,Ti)O3 (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C2H5)4, Pb(DPM)2 and (C2H5)3PbOCH2C(CH3 )3. Ti(O-i-C3H7)4 and Zr(O-t-C4H9)4 were also used as the Ti and Zr precursors. The oxidizing gases used were O2, NO2 , and O2 containing O3. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O2 containing O3 was used, an improvement in breakdown voltage was observed
Keywords :
chemical vapour deposition; crystal orientation; crystal structure; electric breakdown; ferroelectric materials; ferroelectric thin films; lead compounds; piezoceramics; (C2H5)3PbOCH2C(CH3)3; MOCVD; NO2; O2; O3; PZT; Pb precursors; Pb(C2H5)4; Pb(DPM)2; Pb(ZrTi)O3 thin films; PbZrO3TiO3; Ti precursors; Ti(O-i-C3H7)4; Zr precursors; Zr(O-t-C4H9)4; breakdown voltage; crystallinity; electrical properties; film composition; growth temperature; orientation; oxidizing gases; source materials; Crystallization; Ferroelectric materials; Lead; MOCVD; Semiconductor thin films; Solids; Temperature; Transistors; Weight control; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522364
