Title :
Physical vapor deposition of antimony sulpho-iodide (SbSI) thin films and their properties
Author :
Narayanan, Shrikanth ; Pandey, R.K.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
The objective of this work is to fabricate thin films of antimony sulfo-iodide (SbSI) semiconductor ferroelectric and to evaluate its properties. SbSI films (2-4 μm thick) have been fabricated on Pt/Ta/SiO2/Si structures by physical vapor transport in evacuated sealed ampoules. The preferred orientation of these films was (311) as indicated by powder XRD patterns and the films were close to stoichiometric as revealed by EDS analysis. SEM micrograph reveals random orientation of needle like crystallites throughout the surface of the film. A maximum dielectric constant of 500 was measured at a Curie temperature of 21°C
Keywords :
X-ray chemical analysis; X-ray diffraction; antimony compounds; crystal orientation; crystallites; ferroelectric Curie temperature; ferroelectric semiconductors; ferroelectric thin films; permittivity; scanning electron microscopy; semiconductor growth; semiconductor thin films; stoichiometry; vacuum deposition; 2 to 4 mum; 21 C; Curie temperature; EDS analysis; Pt-Ta-SiO2-Si; Pt/Ta/SiO2/Si structures; SEM micrograph; SbSI; SbSI thin films; antimony sulpho-iodide thin films; evacuated sealed ampoules; maximum dielectric constant; needle like crystallites; physical vapor deposition; physical vapor transport; powder XRD patterns; preferred orientation; random orientation; semiconductor ferroelectric; stoichiometric phase; Chemical vapor deposition; Crystallization; Ferroelectric films; Ferroelectric materials; Needles; Pattern analysis; Powders; Semiconductor films; Semiconductor thin films; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522365
