Title :
Mode-locked high-power surface-emitting semiconductor laser
Author :
Aschwanden, A. ; Lorenser, D. ; Häring, R. ; Paschotta, R. ; Gini, E. ; Keller, U.
Author_Institution :
Ultrafast Laser Phys., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We report an optically pumped surface-emitting semiconductor laser which is passively mode-locked and generates 1.9 W of average power in 27-ps pulses at 0.96 μm. The maximum diffraction-limited continuous-wave output is 4.4 W.
Keywords :
laser mode locking; light diffraction; optical pulse generation; semiconductor lasers; surface emitting lasers; 0.96 micron; 1.9 W; 27 ps; 4.4 W; diffraction-limited continuous-wave; mode-locked high-power surface-emitting semiconductor laser; optical pumping; pulse generates; Laser excitation; Laser mode locking; Optical diffraction; Optical pulse generation; Optical pumping; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312190
