Title :
Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy
Author :
Leinonen, P. ; Leinonen, T. ; Viheriala, Jukka ; Pessa, M. ; Kim, Y.K. ; Young, E.W. ; Choquette, K.D.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 766 nm; AlGaAs quantum wells; AlGaInAs quantum wells; AlGaInAs-AlGaAs; molecular beam epitaxy; oxygen sensor; single mode lasing; vertical cavity surface emitting lasers; Absorption; Apertures; Distributed Bragg reflectors; Gallium arsenide; Molecular beam epitaxial growth; Optical sensors; Optical surface waves; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312192
