DocumentCode :
3152147
Title :
Techniques to improve memory interface test quality for complex SoCs
Author :
Devanathan, V.R. ; Vooka, Srinivas
Author_Institution :
Texas Instrum. (India) Pvt. Ltd., Bangalore, India
fYear :
2011
fDate :
20-22 Sept. 2011
Firstpage :
1
Lastpage :
10
Abstract :
Aggressive speed and voltage binning schemes are widely used in the industry to improve the yield of SoCs. For accurate bin classification, it is essential that the tests used for binning target the worst critical/speed-limiting paths in the design. We have observed in many SoCs that memory interface paths are amongst the top critical paths. In this paper, we propose new DFT schemes to improve the quality of memory interface logic test. We also discuss practical challenges and propose solutions for successfully implementing ATPG on memory-interface paths of large SoCs. Experimental results on 40nm industrial designs show an average increase of 36% memory interface fault coverage. Fmax result from production SoC silicon establishes the effectiveness of the proposed scheme for speed binning.
Keywords :
automatic test pattern generation; design for testability; integrated circuit testing; integrated circuit yield; semiconductor storage; system-on-chip; ATPG; DFT; SoC yield; bin classification; binning target; complex SoC; memory interface logic test; memory interface path; memory interface test quality; speed binning; Arrays; Automatic test pattern generation; Built-in self-test; Clocks; Random access memory; System-on-a-chip; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference (ITC), 2011 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1089-3539
Print_ISBN :
978-1-4577-0153-5
Type :
conf
DOI :
10.1109/TEST.2011.6139172
Filename :
6139172
Link To Document :
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