DocumentCode :
3152174
Title :
Diode-pumped Sb-based VCSEL emitting between 2-2.5 μm at RT in CW
Author :
Garnache, A. ; Cerutti, L. ; Genty, F. ; Alibert, C. ; Romanini, D.
Author_Institution :
Centre d´´Electron. et de Microoptoelectron., Univ. Montpellier II, France
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
136
Abstract :
We have developed a low-threshold, compact and all epitaxial semiconductor surface emitting laser grown by MBE on a GaSb substrate, emitting in the 2-2.5 μm range, operating in CW at RT with a TEM00 circular beam. This source is well suited for gas detection applications.
Keywords :
III-V semiconductors; antimony; gas sensors; laser modes; measurement by laser beam; molecular beam epitaxial growth; optical fabrication; optical pumping; quantum well lasers; 2 to 2.5 micron; 293 to 298 K; GaSb; MBE; QW laser; TEM00 circular beam; VCSEL; all epitaxial semiconductor surface emitting laser; continous wave operation; diode-pumped vertical cavity surface emitting laser; gas detection; room temperature; Laser beams; Mirrors; Molecular beam epitaxial growth; Optical pumping; Pump lasers; Semiconductor diodes; Surface emitting lasers; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312197
Filename :
1312197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3152174
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