• DocumentCode
    3152174
  • Title

    Diode-pumped Sb-based VCSEL emitting between 2-2.5 μm at RT in CW

  • Author

    Garnache, A. ; Cerutti, L. ; Genty, F. ; Alibert, C. ; Romanini, D.

  • Author_Institution
    Centre d´´Electron. et de Microoptoelectron., Univ. Montpellier II, France
  • fYear
    2003
  • fDate
    22-27 June 2003
  • Firstpage
    136
  • Abstract
    We have developed a low-threshold, compact and all epitaxial semiconductor surface emitting laser grown by MBE on a GaSb substrate, emitting in the 2-2.5 μm range, operating in CW at RT with a TEM00 circular beam. This source is well suited for gas detection applications.
  • Keywords
    III-V semiconductors; antimony; gas sensors; laser modes; measurement by laser beam; molecular beam epitaxial growth; optical fabrication; optical pumping; quantum well lasers; 2 to 2.5 micron; 293 to 298 K; GaSb; MBE; QW laser; TEM00 circular beam; VCSEL; all epitaxial semiconductor surface emitting laser; continous wave operation; diode-pumped vertical cavity surface emitting laser; gas detection; room temperature; Laser beams; Mirrors; Molecular beam epitaxial growth; Optical pumping; Pump lasers; Semiconductor diodes; Surface emitting lasers; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
  • Print_ISBN
    0-7803-7734-6
  • Type

    conf

  • DOI
    10.1109/CLEOE.2003.1312197
  • Filename
    1312197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3152174