Title :
1.3 μm CW GaInNAs VCSEL giving 4.1 mW single transverse mode power
Author :
Merlin, P. ; Hopkins, J.-M. ; Calvez, S. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
In this paper, we have demonstrated fibre coupled-diode pumping operation of a six QW GaInNAs/GaAs VCSEL showing performance of up to 4.1 mW output coupled into a single-mode fibre at 10°C at 1290.7 nm. Laser emission was observed up to a temperature of 95°C, and the temperature shift is 0.1 nm/K. The VSCEL structure was grown by solid-source MBE using a nitrogen plasma.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; molecular beam epitaxial growth; optical fibre couplers; optical pumping; quantum well lasers; spectral line shift; surface emitting lasers; 1.3 micron; 10 C; 4.1 mW; 95 C; CW QW GaInNAs-GaAs VCSEL; GaInNAs-GaAs; N2; laser emission; optical pumping; single transverse mode power; temperature shift; Laser excitation; Optical coupling; Optical fiber couplers; Optical fiber devices; Optical pumping; Plasma temperature; Power generation; Pump lasers; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312198
