DocumentCode :
3152240
Title :
Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique
Author :
Wu, Dalei ; Mkadem, Farouk ; Boumaiza, Slim
Author_Institution :
University of Waterloo, Canada
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique (SRFT) is presented. Upon determining the impedances for highest efficiency across the bandwidth of interest, the SRFT is used to obtain the optimal matching topology and element values. The effectiveness of this design technique is illustrated using a commercially available 45W GaN device which achieved an average drain efficiency of 63% from 1.9 GHz to 2.9 GHz (∼42%) with an average output power and gain of 45.8 dBm and 10.8 dB respectively. The PA with DPD yielded ACPR below −50dBc when driven with WCDMA and LTE at 2.14 and 2.6 GHz respectively
Keywords :
Bandwidth; Broadband amplifiers; Frequency; Gallium nitride; High power amplifiers; Impedance; Multiaccess communication; Optimal matching; Power generation; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518045
Filename :
5518045
Link To Document :
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