DocumentCode
3152363
Title
Solid-state amplifiers for terahertz electronics
Author
Deal, W.R.
Author_Institution
Northrop Grumman, Redondo Beach, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present our latest work towards demonstrating THz frequency amplifiers,including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solidstate amplifiers at THz frequencies.
Keywords
Frequency measurement; Gain measurement; Indium phosphide; Low-noise amplifiers; Noise measurement; Operational amplifiers; Packaging; Performance gain; Solid state circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5518052
Filename
5518052
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