Distributed amplifiers in InP DHBT for 100-Gbit/s operation

Author

Dupuy, J. -Y ; Konczykowska, A. ; Jorge, F. ; Riet, M. ; Godin, J.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2010

fDate

23-28 May 2010

Firstpage

920

Lastpage

923

Abstract

Two single-ended distributed amplifiers were designed and fabricated using a 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier´s gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier´s gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and large output swing, respectively as high as 2.7 V_pp and 2.4 V_pp, for the first and second amplifier. These distributed amplifiers are well suited for a use as modulator drivers for 100 Gbit/s optical communication systems.

Keywords

III-V semiconductors; distributed amplifiers; heterojunction bipolar transistors; indium compounds; optical fibre networks; DHBT technology; bit rate 100 Gbit/s; bit rate 86 Gbit/s; double heterojunction bipolar transistor; eye diagram measurements; modulator drivers; optical communication systems; single-ended distributed amplifiers; size 0.7 mum; Bandwidth; Bipolar transistors; DH-HEMTs; Distributed amplifiers; Driver circuits; III-V semiconductor materials; Indium phosphide; Optical amplifiers; Semiconductor optical amplifiers; Signal analysis; Distributed amplifiers; driver circuits; heterojunction bipolar transistors; indium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5518056

Filename

5518056