• DocumentCode
    3152663
  • Title

    Demonstration of a Sub-micron Damascene Cu/Low-k Mechanical Sensor to Monitor Stress in BEOL Metallization

  • Author

    Wilson, C.J. ; Croes, K. ; Tokei, Zs ; Beyer, G.P. ; Horsfall, A.B. ; O´Neill, A.G.

  • Author_Institution
    Sch. of Electr., Newcastle Univ., Newcastle upon Tyne
  • fYear
    2009
  • fDate
    March 30 2009-April 2 2009
  • Firstpage
    31
  • Lastpage
    35
  • Abstract
    This work reports the results of a mechanical sensor to monitor stress in 100 nm critical dimension Cu interconnects. Existing methodology developed for larger scale Al sensors is discussed and evaluated for Cu/SiO2 and Cu/Low-k integration schemes. New sensor release methods are then developed and the Cu sensor is demonstrated in single and dual damascene technology. We also demonstrate the sensor is sensitive to process modifications and a viable tool for monitoring stress in the Cu back end of line stack.
  • Keywords
    copper; integrated circuit interconnections; metallisation; monitoring; silicon compounds; stress measurement; Cu-SiO2; dual damascene technology; integration schemes; interconnects; metallization; stress monitoring; submicron damascene Cu-low-k mechanical sensor; Computerized monitoring; Delay; Dielectrics; Mechanical sensors; Metallization; Metals industry; Residual stresses; Strain measurement; Stress measurement; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
  • Conference_Location
    Oxnard, CA
  • Print_ISBN
    978-1-4244-4259-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.2009.4814604
  • Filename
    4814604