DocumentCode
3152663
Title
Demonstration of a Sub-micron Damascene Cu/Low-k Mechanical Sensor to Monitor Stress in BEOL Metallization
Author
Wilson, C.J. ; Croes, K. ; Tokei, Zs ; Beyer, G.P. ; Horsfall, A.B. ; O´Neill, A.G.
Author_Institution
Sch. of Electr., Newcastle Univ., Newcastle upon Tyne
fYear
2009
fDate
March 30 2009-April 2 2009
Firstpage
31
Lastpage
35
Abstract
This work reports the results of a mechanical sensor to monitor stress in 100 nm critical dimension Cu interconnects. Existing methodology developed for larger scale Al sensors is discussed and evaluated for Cu/SiO2 and Cu/Low-k integration schemes. New sensor release methods are then developed and the Cu sensor is demonstrated in single and dual damascene technology. We also demonstrate the sensor is sensitive to process modifications and a viable tool for monitoring stress in the Cu back end of line stack.
Keywords
copper; integrated circuit interconnections; metallisation; monitoring; silicon compounds; stress measurement; Cu-SiO2; dual damascene technology; integration schemes; interconnects; metallization; stress monitoring; submicron damascene Cu-low-k mechanical sensor; Computerized monitoring; Delay; Dielectrics; Mechanical sensors; Metallization; Metals industry; Residual stresses; Strain measurement; Stress measurement; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location
Oxnard, CA
Print_ISBN
978-1-4244-4259-1
Type
conf
DOI
10.1109/ICMTS.2009.4814604
Filename
4814604
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