Optimisation of optical cavity design of GaN resonant cavity light emitting diodes

Author

Shaw, A.J. ; Donegan, J.F. ; Bradley, A. Louise ; Lunney, J.G.

Author_Institution

Phys. Dept., Trinity Coll., Dublin, Ireland

fYear

2003

fDate

22-27 June 2003

Firstpage

161

Abstract

Resonant cavity light emitting diodes (RCLEDs) have shown considerable potential as sources in plastic optical fiber (POF) applications. The optical properties of the substrate emitting metal-DBR GaN RCLEDs differ considerably from those of the top emitting DBR-DBR RCLED structure of red RCLED devices. The optimum cavity design for maximum light extraction efficiency into numerical apertures (NAs) of 1.0 (total emission) and 0.5 (typical POF NA) have been determined as functions of the intrinsic emission linewidth of the InGaN/GaN QW emitter and the aluminum fraction in the DBR.

Keywords

III-V semiconductors; distributed Bragg reflectors; gallium compounds; laser cavity resonators; light emitting diodes; optical design techniques; optical fibres; optimisation; 510 nm; 570 nm; 650 nm; InGaN-GaN; intrinsic emission; light extraction efficiency; numerical apertures; optical cavity design; optical properties; optimisation; plastic optical fiber; quantum well emitter; resonant cavity light emitting diodes; substrate emitting metal-distributed Bragg reflectors; Apertures; Design optimization; Gallium nitride; Light emitting diodes; Optical design; Optical devices; Optical fibers; Plastics; Resonance; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312222

Filename

1312222