Highly integrated 79, 94, and 120-GHz SiGe radar frontends

Author

Jahn, M. ; Stelzer, A. ; Hamidipour, A.

Author_Institution

Johannes Kepler Univ. of Linz, Linz, Austria

fYear

2010

fDate

23-28 May 2010

Firstpage

1324

Lastpage

1327

Abstract

This paper reflects on design aspects for multichannel frequency-continuous wave (FMCW) radar frontends from conception to application on board. In the 79-GHz domain, multi-channel applications are recapitulated, and in the 94-GHz domain, a broadband transceiver is presented along with a voltage-controlled oscillator (VCO) that covers a tuning range of 12 GHz. The functionality of the 94-GHz chipset was verified by means of a four-channel multiple-input multiple-output (MIMO) radar prototype. Finally, a highly integrated 120-GHz transceiver with on-chip signal generation is presented.

Keywords

CW radar; MIMO radar; voltage-controlled oscillators; FMCW radar frontends; MIMO radar; SiGe; broadband transceiver; frequency 120 GHz; frequency 79 GHz; frequency 94 GHz; multichannel frequency-continuous wave; multiple-input multiple-output radar; on-chip signal generation; voltage-controlled oscillator; Frequency; Germanium silicon alloys; MIMO; Prototypes; Radar applications; Signal generators; Silicon germanium; Transceivers; Tuning; Voltage-controlled oscillators; FMCW; MMICs; Millimeter wave bipolar transistors; Millimeter wave circuits; Millimeter wave radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5518069

Filename

5518069