DocumentCode
3152722
Title
Operating regimes and optical bistability in InGaAs/InGaAsP and GaAs/AlGaAs ring lasers
Author
Sorel, M. ; Laybourn, P.J.R. ; Giuliani, G. ; Donati, S. ; Scire, Alessia
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2003
fDate
22-27 June 2003
Firstpage
164
Abstract
It has recently been found that the coexistence of the two counterpropagating modes in the laser cavity may affect the optical stability and lead to a large variety of operating regimes. In this work we report on the ring cavity mode behaviour in ridge-waveguide semiconductor lasers fabricated on GaAs/AlGaAs and InGaAs/InGaAsP material systems. Investigation on the unidirectional operating regime has shown a drastic improvement in the device performance and frequency stability with respect to bidirectional operation. In addition, we found that a semiconductor ring laser (SRL) operating in the unidirectional regime behaves as an optical bistable device between the two counterpropagating modes.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser frequency stability; laser modes; optical bistability; ridge waveguides; ring lasers; semiconductor lasers; waveguide lasers; GaAs-AlGaAs; InGaAs-InGaAsP; bidirectional operating regime; frequency stability; laser cavity counterpropagating mode; optical bistability; optical bistable device; ridge-waveguide; ring cavity mode behaviour; semiconductor ring laser; unidirectional operating regime; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Optical bistability; Optical devices; Optical materials; Ring lasers; Semiconductor lasers; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312225
Filename
1312225
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