• DocumentCode
    3152739
  • Title

    Effect of electron irradiation on annealing behavior of 1.3-μm GalnNAs/GaNAs/GaAs laser-like quantum wells

  • Author

    Pavelescu, E.-M. ; Pessa, M. ; Gheorghiu, A.

  • Author_Institution
    Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
  • fYear
    2003
  • fDate
    22-27 June 2003
  • Firstpage
    165
  • Abstract
    Thermal annealing efficiently enhances the poor optical activity of GaInNAs-based quantum-well (QW) structures. 7-MeV electron irradiation at the 2×1017 e/cm2 fluence decreased almost two times the PL intensity of GaInNAs/GaNAs/GaAs QWs. At the same time, the PL linewidth enhanced with 1.6 meV, whereas the PL red shifted with 6 nm.
  • Keywords
    III-V semiconductors; electron beam annealing; gallium arsenide; gallium compounds; indium compounds; photoluminescence; rapid thermal annealing; red shift; semiconductor lasers; semiconductor quantum wells; wide band gap semiconductors; 1.3 micron; 1.6 meV; 7 MeV; GaInNAs-GaNAs-GaAs; GaInNAs-based quantum-well structures; PL red shift; electron irradiation; optical activity; thermal annealing; Atom optics; Computer aided analysis; Diffusion processes; Electrons; Gallium arsenide; Heat treatment; Quantum well lasers; Rapid thermal annealing; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
  • Print_ISBN
    0-7803-7734-6
  • Type

    conf

  • DOI
    10.1109/CLEOE.2003.1312226
  • Filename
    1312226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3152739