DocumentCode
3152764
Title
Enhanced self-mode-locking in broad area semiconductor lasers by pulse injection
Author
Kaiser, J. ; Fischer, I. ; Elsaber, Wolfgang
Author_Institution
Inst. of Appl. Phys., Darmstadt Univ. of Technol., Germany
fYear
2003
fDate
22-27 June 2003
Firstpage
166
Abstract
In this paper we give evidence that in free-running broad area semiconductor lasers (BALs) weak self-mode-locking of longitudinal modes already exists, leading to a fast regular intensity modulation of the output at the cavity round trip time. This fast dynamics deteriorates the output in terms of spectral width and temporal stability on the one hand, but on the other hand it could also offer an interesting possibility for optical pulse generation in these semiconductor laser devices. In fact, a significant improvement of the pulsed output has been achieved by additional injection of a picosecond pulse into the device.
Keywords
intensity modulation; laser cavity resonators; laser mode locking; optical pulse generation; semiconductor lasers; broad area semiconductor laser device; cavity round trip time; intensity modulation; optical pulse generation; picosecond pulse injection; self-mode-locking; spectral width; temporal stability; Cameras; Intensity modulation; Laser mode locking; Laser modes; Laser stability; Laser theory; Optical coupling; Optical pulse generation; Optical pulses; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312227
Filename
1312227
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