Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

In this paper, a mismatch test structure in standard pair configuration using Kelvin method is introduced to better estimate the MOSFET local electrical fluctuations in sub-hundred nanometer technologies. Considering this test structure configuration, the impact of extern access connections on threshold voltage (Vt), gain factor (szlig) and drain current (I_D) mismatch extraction is investigated. To exhibit the impact of this parameter, the Vt and szlig are then extracted using extrapolation method. We demonstrate that the variability of access connections does not impact Vt mismatch whereas drain current matching is underestimated without Kelvin method.