Title :
InAs on InP quantum dots for optoelectronic applications
Author :
Reithmaier, J.P. ; Schwertberger, R. ; Gold, D. ; Forchel, A. ; Bilenca, A. ; Alizon, R. ; Mikhelashhvili, V. ; Dahan, D. ; Eisenstein, G.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
This paper gives an overview about the status of the development of InP-based quantum dot structures and their applications in optoelectronic devices. As examples, device properties of quantum dash lasers and of semiconductor optical amplifiers will be presented and their performance discussed in comparison to quantum well devices.
Keywords :
III-V semiconductors; indium compounds; optoelectronic devices; quantum well devices; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InP; InP-based quantum dot structure; optoelectronic device; quantum dash laser; quantum well device; semiconductor optical amplifier; Electrons; Gallium arsenide; Gold; Indium phosphide; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312233
