• DocumentCode
    3152962
  • Title

    Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor

  • Author

    Isogai, T. ; Tanaka, H. ; Teramoto, A. ; Goto, T. ; Sugawa, S. ; Ohmi, T.

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai
  • fYear
    2009
  • fDate
    March 30 2009-April 2 2009
  • Firstpage
    109
  • Lastpage
    113
  • Abstract
    In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 Omegacm2 region.
  • Keywords
    electric resistance measurement; electrical contacts; electrical resistivity; elemental semiconductors; resistors; semiconductor-insulator boundaries; silicon; Si; cross bridge Kelvin resistor; silicide-silicon contact; test structure; ultralow contact resistivity measurement; Bridges; Circuit simulation; Conductivity; Contact resistance; Electrical resistance measurement; Kelvin; Resistors; Silicides; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
  • Conference_Location
    Oxnard, CA
  • Print_ISBN
    978-1-4244-4259-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.2009.4814621
  • Filename
    4814621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3152962