Determination of the band diagram of the semiconductor laser structure by optical modulation spectroscopy methods

Author

Chernikov, M.A. ; Sotnikov, A.E. ; Ryabushkin, O.A. ; Trubenko, P. ; Berishev, I. ; Ovtchinnikov, A.

Author_Institution

Moscow Inst. of Phys. & Technol., Russia

fYear

2003

fDate

22-27 June 2003

Firstpage

179

Abstract

This paper presents the use of photoreflectance, configuration of electroreflectance and below-bandgap-excitation photoreflectance for determination of the band diagram of the semiconductor laser AlGaAs/GaAs heterostructure with strained InGaAs quantum well grown on n-GaAs substrate. The structure was illuminated by low-intensity probe light with quantum energy and was exposed to external influence with modulation frequency f=330Hz.

Keywords

III-V semiconductors; aluminium compounds; electroreflectance; energy gap; gallium arsenide; indium compounds; modulation spectroscopy; optical modulation; photoreflectance; probes; semiconductor lasers; semiconductor quantum wells; 330 Hz; AlGaAs-GaAs; AlGaAs-GaAs heterostructure; GaAs; InGaAs; InGaAs quantum well; band diagram; below-bandgap-excitation photoreflectance; electroreflectance; illumination; modulation frequency; n-GaAs substrate; optical modulation spectroscopy method; probe light; quantum energy; semiconductor laser; Business process re-engineering; Electrons; Erbium; Optical modulation; Permittivity measurement; Physics; Probes; Quantum well lasers; Semiconductor lasers; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312240

Filename

1312240