• DocumentCode
    3153002
  • Title

    High spatial resolution of argon plasma-based quantum well intermixing using thermal stress-induced mask in InGaAs/InGaAsP laser structure

  • Author

    Djie, H.S. ; Arokiaraj, J. ; Mei, T. ; Ng, S.L.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2003
  • fDate
    22-27 June 2003
  • Firstpage
    180
  • Abstract
    This paper deals about the high spatial resolution technique of argon plasma based quantum well intermixing using Si3N4 as the thermal stress-induced annealing mask in InGsAs/InGaAsP laser structure.
  • Keywords
    III-V semiconductors; argon; gallium arsenide; indium compounds; masks; semiconductor lasers; semiconductor quantum wells; silicon compounds; thermal stresses; Ar; InGaAs-InGaAsP; InGsAs-InGaAsP laser structure; Si3N4; annealing mask; argon plasma; quantum well intermixing; spatial resolution technique; thermal stress; Annealing; Argon; Indium gallium arsenide; Photonic band gap; Plasma applications; Plasma devices; Plasma sources; Quantum well lasers; Spatial resolution; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
  • Print_ISBN
    0-7803-7734-6
  • Type

    conf

  • DOI
    10.1109/CLEOE.2003.1312241
  • Filename
    1312241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3153002