300 GHz six-stage differential-mode amplifier

Author

Park, H.J. ; Rieh, J.-S. ; Kim, M. ; Hacker, J.B.

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2010

fDate

23-28 May 2010

Firstpage

49

Lastpage

52

Abstract

A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.

Keywords

MMIC amplifiers; amplifiers; indium compounds; integrated circuit design; DHBT; InP; cascade chain; differential configuration; differential mode amplifier gain; double-heterojunction bipolar transistor; frequency 20 GHz; frequency 290 GHz; frequency 300 GHz; gain 17.3 dB; gain bandwidth; six-stage differential-mode amplifier; Cutoff frequency; DH-HEMTs; Dielectric substrates; Differential amplifiers; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; MODFETs; Radiofrequency amplifiers; Indium phosphide (InP); monolithic millimeter-wave integrated circuit (MMIC); terahertz amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5518084

Filename

5518084